features darlington transistor dimensions in inches and (millimeters) .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 3 12 top view .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) case: sot-23 plastic package weight: approx. 0.008 g mechanical data maximum ratings and electrical characteristics ratings at 25 c ambient temperature unless otherwise specified pin configuration 1 = base 2 = emitter 3 = collector sot-23 21 3 4/98 BCV27 symbol value unit collector-emitter voltage v ceo 30 v collector-base voltage v cbo 40 v emitter-base voltage v ebo 10 v collector current i c 300 ma peak collector current i cm 800 ma base current i b 100 ma power dissipation at t sb = 50 c p tot 300 1) mw junction temperature t j 150 c storage temperature range t s C65 to +150 c 1) device on fiberglass substrate, see layout marking ff high collector current high current gain npn silicon planar darlington transistor for general nf applications as complementary type, the pnp transistor bcv26 is recommended.
electrical characteristics ratings at 25 c ambient temperature unless otherwise specified BCV27 symbol min. typ. max. unit collector-base cutoff current at v cbo = 30 v i cbo CC0.1 m a emitter-base cutoff current at v eb = 10 v i ebo CC0.1 m a collector-emitter breakdown voltage at i c = 10 ma v (br)ceo 30CCv collector-base breakdown voltage at i c = 10 m a v (br)cbo 40CCv emitter-base breakdown voltage at i e = 100 na v (br)ebo 10CCv dc current gain at v ce = 5 v, i c = 1 ma at v ce = 5 v, i c = 10 ma at v ce = 5 v, i c = 100 ma h fe h fe h fe 4000 10000 20000 C C C C C C C C C collector-emitter saturation voltage at i c = 100 ma, i b = 0.1 ma v cesat CC1.0v base-emitter saturation voltage at i c = 100 ma, i b = 0.1 ma v besat CC1.5v gain-bandwidth product at v ce = 5 v, i c = 30 ma, f = 100 mhz f t C 220 C mhz collector-base capacitance at v cb = 30 v, i e = 0, f = 1 mhz c cbo C3.5Cpf thermal resistance junction to ambient air r thja C C 430 1) k/w 1) device on fiberglass substrate, see layout below .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) dimensions in inches (millimeters) .47 (12) layout for r thja test thickness: fiberglass 0.059 in (1.5 mm) copper leads 0.012 in (0.3 mm)
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